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Title 0.7-eV GaInAs junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) four-junction solar cell [electronic resource] : preprint / D.J. Friedman ... [et al.].

Imprint Golden, CO : National Renewable Energy Laboratory, [2006]

Copies

Location Call No. OPAC Message Status
 Axe Fed Docs - Online Documents  E 9.17:NREL/CP-520-39913    ---  Available
Description 5 p. : digital, PDF file
Series NREL/CP ; 520-39913
System Details Mode of access via the NREL web site.
Note "Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."
Summary We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future.
Note Title from title screen (viewed January 8, 2008).
"May 2006."
Form Full text available via Internet in .pdf format.
Subject Solar cells -- Design and construction.
Photovoltaic cells -- Research.
Gallium arsenide semiconductors.
Indium.
Thin films.
Added Author Friedman, Daniel J. (Daniel Joseph)
National Renewable Energy Laboratory (U.S.)
Added Title Seven tenths electron volt gallium indium arsenide junction
Gpo Item No. 0430-P-04 (online)
Sudoc No. E 9.17:NREL/CP-520-39913

 
    
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