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Author Afanasev, V. V.

Title Internal photoemission spectroscopy : principles and applications / Valery V. Afanasev.

Imprint Oxford, UK ; Boston : Elsevier, 2008.

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Location Call No. OPAC Message Status
 Axe Elsevier ScienceDirect Ebook  Electronic Book    ---  Available
Edition 1st ed.
Description 1 online resource (xvi, 295 pages) : illustrations
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Summary The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors.
Contents List of Abbreviations -- List of Symbols -- Preface -- Chapter 1. Preliminary Remarks and Historical Overview -- Chapter 2. Internal versus External Photoemission -- Chapter 3. Model Description and Experimental Realization of IPE -- Chapter 4. Internal Photoemission Spectroscopy Methods -- Chapter 5. Injection Spectroscopy of Thin Layers of Solids: Internal Photoemission as Compared to Other Injection Methods -- Chapter 6. Trapped Charge Monitoring and Characterization -- Chapter 7. Charge Trapping Kinetics in the Injection-Limited Current Regime -- Chapter 8. Transport Effects in Charge Trapping -- Chapter 9. Semiconductor-Insulator Interface Barriers -- Chapter 10. Electron Energy Barriers Between Conducting and Insulating Materials -- Chapter 11. Spectroscopy of Charge Traps in Thin Insulating Layers -- Chapter 12. Conclusions -- References.
Bibliography Includes bibliographical references (pages 263-289) and index.
Note Print version record.
Language English.
Subject Photoelectron spectroscopy.
Photoemission.
Semiconductors -- Junctions.
Spectroscopie de photoélectrons.
Photoémission.
Semi-conducteurs -- Jonctions.
Photoelectron spectroscopy
Photoemission
Semiconductors -- Junctions
Other Form: Print version: Afanasev, V.V. Internal photoemission spectroscopy. 1st ed. Oxford, UK ; Boston : Elsevier, 2008 9780080451459 0080451454 (OCoLC)166379668
ISBN 9780080451459
0080451454
1281096113
9781281096111
9786611096113
6611096116
0080555896
9780080555898
Standard No. AU@ 000043178518
DEBBG BV042316634
DEBSZ 367771772
NZ1 12541676
NZ1 15190151

 
    
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