| Edition |
Second edition / edited by Carlo Lamberti, Giovanni Agostini. |
| Description |
1 online resource (xiii, 813 pages) |
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text txt rdacontent |
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computer c rdamedia |
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online resource cr rdacarrier |
| Note |
Previous edition: 2008. |
| Bibliography |
Includes bibliographical references and index. |
| Summary |
Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc.) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. - Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures. - Most of the chapters are authored by scientists that are world wide among the top-ten in publication ranking of the specific field. - Each chapter starts with a didactic introduction on the technique. - The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures. |
| Note |
Print version record. |
| Contents |
Front Cover; Characterization of Semiconductor Heterostructures and Nanostructures; Copyright; Dedication; Contents; Preface; Contributors; Chapter 1 -- Introduction: The InterdisciplinaryNature of and Nanotechnologyand Its Need to Exploit FrontierCharacterization Techniques; 1. THE SCIENTIFIC AND EDITORIAL BOOMING OF NANOTECHNOLOGY IN THE NEW MILLENNIUM; 2. HETEROSTRUCTURES AND NANOSTRUCTURES: DEFINITION AND APPLICATIONS, FROM OPTOELECTRONIC TO CATALYSIS; 3. DYNAMIC INTERPLAY AMONG GROWTH/SYNTHESIS TECHNIQUES, THEORETICAL MODELING AND CHARACTERIZATION TECHNIQUES IN THE DESIGN AND ... |
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4. PURPOSES OF THE BOOK AND CHAPTERS LAYOUTREFERENCES; Chapter 2 -- Ab initio Studies of Structural and Electronic Properties; 1. INTRODUCTION; 2. BASIC MODELS FOR BAND ALIGNMENTS; 3. COMPUTATIONAL APPROACH; 4. BAND OFFSETS; 5. DESIGNING HETEROSTRUCTURES AND ENGINEERING BAND OFFSETS; 6. ELECTRONIC STATES; 7. COMPLEX HETEROSTRUCTURES FOR ADVANCED APPLICATIONS; 8. SUMMARY AND FUTURE PERSPECTIVES; ACKNOWLEDGMENTS; REFERENCES AND NOTES; Chapter 3 -- Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction; 1. INTRODUCTION |
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2. LATTICE-MISMATCHED AND PSEUDOMORPHIC HETEROSTRUCTURES3. X-RAY DIFFRACTION PROFILES OF SEMICONDUCTOR HETEROSTRUCTURES; 4. DETERMINATION OF THE COMPOSITION OF SEMICONDUCTOR ALLOY HETEROSTRUCTURES; 5. STRAIN RELEASE IN SEMICONDUCTOR HETEROSTRUCTURES; 6. EXPERIMENTAL RESULTS; 7. SUMMARY AND FUTURE PERSPECTIVES; REFERENCES; Chapter 4 -- Nanostructures Observed by Surface Sensitive X-Ray Scattering and Highly Focused Beams; 1. INTRODUCTION; 2. EXPERIMENTAL SETUPS; 3. SCIENTIFIC BACKGROUND FOR GRAZING INCIDENCE X-RAY TECHNIQUES ON NANOSTRUCTURES |
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4. EXAMPLES OF GRAZING INCIDENCE TECHNIQUES APPLIED TO NANOSTRUCTURES5. FOCUSED X-RAYS APPLIED TO THE STUDY OF INDIVIDUAL NANOSTRUCTURES; 6. SUMMARY AND FUTURE PERSPECTIVE; REFERENCES; Chapter 5 -- Small-Angle X-ray Scattering for the Study of Nanostructures and Nanostructured Materials; 1. INTRODUCTION; 2. THEORY OF SAXS; 3. APPLICATION OF SAXS TECHNIQUE; ACKNOWLEDGMENTS; REFERENCES; Chapter 6 -- Local Structure of Bulk and Nanocrystalline Semiconductors Using Total Scattering Methods; 1. INTRODUCTION; 2. THE TOTAL SCATTERING PDF METHOD |
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3. EXAMPLE: MOTIONAL CORRELATIONS IN BULK CRYSTALLINE SEMICONDUCTORS4. EXAMPLE: DISORDER DUE TO ALLOYING IN BULK SEMICONDUCTOR ALLOYS; 5. EXAMPLE: NANOSCALE FLUCTUATIONS IN PURE BULK SEMICONDUCTORS; 6. EXAMPLE: STRUCTURE, DEFECTS, STRAIN, AND SIZE IN SEMICONDUCTOR NPS; 7. SUMMARY AND PERSPECTIVES ON THE FUTURE; REFERENCES; Chapter 7 -- X-Ray Absorption Fine Structure in the Study of Semiconductor Heterostructures and Nanostructures; 1. INTRODUCTION TO X-RAY ABSORPTION SPECTROSCOPY FOR LOCAL STRUCTURAL STUDIES; 2. DETECTION SCHEMES AND EXPERIMENTAL SET-UPS RELEVANT FOR SEMICONDUCTOR RESEARCH |
| Subject |
Semiconductors -- Characterization.
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Heterostructures.
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Nanostructures.
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Semi-conducteurs -- Caractérisation.
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Hétérostructures.
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Nanostructures.
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Heterostructures
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Nanostructures
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Semiconductors -- Characterization
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| Added Author |
Lamberti, Carlo, editor.
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Agostini, Giovanni, 1980- editor.
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| Other Form: |
Print version: Characterization of semiconductor heterostructures and nanostructures. 2nd ed. Amsterdam ; London : Elsevier Science, 2013 9780444595515 (OCoLC)818450681 |
| ISBN |
9780444595515 (electronic bk.) |
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0444595511 (electronic bk.) |
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0444595511 |
| Standard No. |
AU@ 000050859293 |
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DEBBG BV042312915 |
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DEBSZ 381679810 |
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NZ1 15194351 |
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DKDLA 820050-katalog:9920695207805762 |
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