Epitaxial thin film silicon solar cells fabricated by hot wire chemical vapor deposition below 750C [electronic resource] : preprint / K. Alberi ... [et al.].
Imprint
Golden, CO : National Renewable Energy Laboratory, 2009.
"To be presented at the 34th IEEE Photovoltaic Specialists Conference, Philadelphia, Pennsylvania, June 7-12, 2009."
Bibliography
Includes bibliographical references (p. 3).
Summary
We report the fabrication of film c-Si solar cells on Si wafer templates by hot wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750C, demonstrate open-circuit voltages > 500 mV and efficiencies upward of 5%. Analysis of the device characteristics and quantum efficiency provides important information about the epitaxial c-Si absorber material quality as a function of growth temperature.
