Si passivation and chemical vapor deposition of silicon nitride [electronic resource] : final technical report, March 18, 2007 / H.A. Atwater, California Institute of Technology.
Imprint
Golden, Colo. : National Renewable Energy Laboratory, [2007]
Mode of access via the National Renewable Energy Laboratory web site.
Full text available via Internet in .pdf format. Adobe Acrobat Reader required.
Note
Title from title screen (viewed Mar. 20, 2008).
"November 2007."
Summary
This report investigated chemical and physical methods for Si surface passivation for application in crystalline Si and thin Si film photovoltaic devices. Overall, our efforts during the project were focused in three areas: i) synthesis of silicon nitride thin films with high hydrogen content by hot-wire chemical vapor deposition; ii) investigation of the role of hydrogen passivation of defects in crystalline Si and Si solar cells by out diffusion from hydrogenated silicon nitride films; iii) investigation of the growth kinetics and passivation of hydrogenated polycrystalline. Silicon nitride films were grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiHb4s/NHb3s flow ratio. It was demonstrated that hot-wire chemical vapor deposition leads to growth of SiNx films with controllable stoichiometry and hydrogen.
