| Description |
xvii, 337 p. : ill. |
| Bibliography |
Includes bibliographical references and index. |
| Summary |
The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion. |
| Reproduction |
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. |
| Subject |
Semiconductor doping.
|
|
Ion implantation.
|
|
Semiconductors -- Heat treatment.
|
| Genre/Form |
Electronic books.
|
| Added Author |
Baudrant, Annie.
|
|
ProQuest (Firm)
|
| ISBN |
9781848212312 (hc) |
|
1848212313 |
|
9781118601112 (electronic bk.) |
|
