| Edition |
First edition. |
| Description |
1 online resource (xiv, 526 pages) : illustrations (some color). |
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text txt rdacontent |
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computer c rdamedia |
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online resource cr rdacarrier |
| Series |
Semiconductors and semimetals, 0080-8784 ; v. 86 |
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Semiconductors and semimetals ; v. 86.
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| Language |
Text in English. |
| Bibliography |
Includes bibliographical references and index. |
| Summary |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. |
| Contents |
Front Cover; Advances in Semiconductor Lasers; Copyright; Contents; List of Contributors; Preface; Chapter 1: High-Power Slab-Coupled Optical Waveguide Lasers and Amplifiers; 1 Introduction; 2 Slab-Coupled Optical Waveguide Concept and Initial Laser Demonstration; 3 GaAs-Based SCOW Devices; 3.1 InGaAs/AlGaAs/GaAs SCOWLs; 3.2 Reliability; 3.3 InGaAs/AlGaAs/GaAs SCOW amplifiers; 3.4 Mode-locked GaAs-based SCOWLs; 3.5 Arrays and beam combining; 3.5.1 Arrays; 3.5.2 Wavelength beam combining; 3.5.3 Coherent beam combining; 3.5.3.1 Talbot-plane CBC; 3.5.3.1 Master-oscillator power-amplifier CBC |
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4 InP-Based 1.5-mum SCOW Devices4.1 Lasers; 4.2 Amplifiers; 4.3 Single-frequency external-cavity lasers; 4.4 Mode-locked lasers; 5 GaSb-Based 2-mum SCOWLs; 6 Summary; Acknowledgments; References; Chapter 2: High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths; 1 Introduction; 2 DFB and DBR Simulation Methods; 2.1 Design concept 1: The DBR laser; 2.2 Design concept 2: The DFB laser; 2.3 Integration of grating into the vertical design; 2.4 Wavelength considerations; 3 Production of Short-Period Gratings; 4 Gratings with Epitaxial Overgrowth |
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5 Surface Grating Patterning6 Single-Lateral-Mode Lasers; 7 Broad-Area, Laterally Multi-Mode Diode Lasers; 8 Tapered Devices; 9 Novel Resonators; 10 Conclusions; References; Chapter 3: Advances in Mode-Locked Semiconductor Lasers; 1 Introduction; 2 Mode-Locking Techniques in Laser Diodes: The Main Features; 3 Mode-Locking Theory: Recent Progress and the State of the Art; 3.1 Self-consistent pulse profile analysis; 3.2 Traveling-wave ML models; 3.3 Frequency-domain analysis of ML; 3.4 Delay-differential model of ML; 4 The Main Predictions of Mode-Locked Laser Theory |
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4.1 Operating regime depending on the operating point4.2 The main parameters that affect mode-locked laser behaviour; 5 Important Tendencies in Optimizing the Mode-Locked Laser Performance; 5.1 Achieving a high gain-to-absorber saturation energy ratio; 5.2 Improving stability and pulse duration by reducing the SA recovery time; 5.3 Increasing the optical power: Broadening the effective modal cross section; 5.4 Engineering the bit rate. High power and high bit rate operation. Harmonic ML; 5.5 Noise considerations in ML operation; 6 Novel Mode-Locking Principles; 6.1 QD materials |
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6.2 Femtosecond pulse generation by mode-locked vertical cavity lasers. Coherent population effects as possible saturable abs6.3 Spontaneous ML in single-section lasers; 6.4 Minitaturization and integration: Ring and microring resonator cavities; 7 Overview of Possible Applications of Mode-Locked Lasers; 7.1 Optical and optically assisted communications; 7.2 Biophotonics and medical applications; 8 Concluding Remarks; References; Chapter 4: GaN Laser Diodes on Nonpolar and Semipolar Planes; 1 Introduction; 2 Material Properties of Different Planes of GaN; 2.1 Polarization; 2.2 Band structure |
| Subject |
Semiconductor lasers.
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Optoelectronic devices.
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Semiconductors -- Optical properties.
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Lasers à semi-conducteurs.
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Dispositifs optoélectroniques.
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Semi-conducteurs -- Propriétés optiques.
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Optoelectronic devices
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Semiconductor lasers
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Semiconductors -- Optical properties
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| Added Author |
Coleman, James J., 1950- editor.
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Bryce, A. Catrina (Ann Catrina), editor.
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Jagadish, C. (Chennupati), editor.
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| ISBN |
9780123910660 (electronic bk.) |
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0123910668 (electronic bk.) |
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1280581794 |
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9781280581793 |
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0123910676 |
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0123910668 |
| Standard No. |
DEBSZ 372738982 |
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DEBSZ 405343825 |
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