| Description |
1 online resource (13 p.) : digital, PDF file |
| Series |
Subcontract report NREL/SR ; 520-46903 |
|
NREL/SR ; 520-46903.
|
| Note |
Title from title screen (viewed June 28, 2010). |
|
"May 2010"--Cover. |
|
"October 2009"--T.p. |
| Bibliography |
Includes bibliographical references (p. 11-13). |
| Summary |
The initial motivation for the University of Delaware/Georgia Institute of Technology project was the then-newly discovered bandgap of InN, which was re-measured at ~0.7 eV, rather than the previous 1.9 eV. This made InGaN a potential material for solar cells with the possibility of absorbing 99% of the solar irradiance. The advantages of the InGaN material system are the wide range of direct bandgap, high absorption coefficient, a low effective mass (high mobility), and strong polarization effects. However, the challenges include material quality, defect density, doping, substrates, and growth issues. Our project led to the understanding of the above challenges; in particular, we studied the material quality in terms of phase separation and how to suppress it. We modeled polarization and developed a solar cell design with these new models. |
| Subject |
Photovoltaic cells -- Research.
|
|
Solar cells -- Design and construction.
|
| Added Author |
Doolittle, W. A. (W. Alan)
|
|
Ferguson, Ian T.
|
|
National Renewable Energy Laboratory (U.S.)
|
| Added Title |
Novel high efficiency photovoltaic devices based on the 3-nitride material system |
| Other Form: |
Paper version: Honsberg, C. (Christiana B.). Novel high efficiency photovoltaic devices based on the III-N material system. 13 p. (OCoLC)648963595 |
| Gpo Item No. |
0430-P-05 (online) |
| Sudoc No. |
E 9.18:NREL/SR-520-46903 |
|
