| Description |
1 online resource (xi, 444 pages) : illustrations |
|
text txt rdacontent |
|
computer c rdamedia |
|
online resource cr rdacarrier |
| Series |
Semiconductors and semimetals ; v. 56 |
|
Semiconductors and semimetals ; v. 56.
|
| Bibliography |
Includes bibliographical references and index. |
| Note |
Print version record. |
| Summary |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry |
| Contents |
Front Cover; Germanium Silicon: Physics and Materials; Copyright Page; Contents; List of Contributors; Chapter 1. Growth Techniques and Procedures; I. Introduction; II. Generic lssues; III. Common Growth Techniques; IV. Comparison of Growth Results; V. Nonplanar Growth; VI. Summary; Chapter 2. Fundamental Mechanisms of Film Growth; I. Introduction; II. Silicon; III. Heteroepitaxial Growth: Ge on Si; IV. SiGe Alloy Films; V. Summary; References; Chapter 3. Misfit Strain and Accommodation in SiGe Heterostructures; I. Origin of Strain in Heteroepitaxy; II. Accommodation of Strain. |
|
III. Review of Basic Dislocation TheoryIV. Excess Stress, Equilibrium Strain and Critical Thickness; V. Metastability and Misfit Dislocation Kinetics; VI. Misfit and Threading Dislocation Reduction Techniques; VII. Conclusions; References; Chapter 4. Fundamental Physics of Strained Layer GeSi: Quo Vadis?; I. Introduction; II. Perfect Superlattice Systems; III. Electronic Structure of Imperfect and Finite Systems; IV. Luminescence and Interface Localization; V. Microscopic Signature of GeSi Interfaces; VI. Microscopic Electronic Structure Effects in Optical Spectra; VII. Conclusion; References. |
|
Chapter 5. Optical PropertiesI. Introduction; II. Forms of Differential Spectroscopy Based on Reflection or Absorption of Light; III. Raman Scattering; IV. Photoluminescence; V. Concluding Remarks; References; Chapter 6. Electronic Properties and Deep Levels in Germanium-Silicon; I. Introduction; II. Deep Levels in GexSi1-x; III. Influence of Defects on Electrical Properties of GexSi1-x, Alloys; IV. Camer Transport Properties of GexSi1-x; V. Conclusions; References; Chapter 7. Optoelectronics in Silicon and Germanium Silicon; I. Introduction; II. Photodetectors; III. Light Emitters. |
|
IV. Guided-Wave DevicesV. Conclusions; References; Chapter 8. Si1-y, Cy, and Si1-x-yGexCy Alloy Layers; I. Introduction; II. General Remarks on the Material Combination of Si, Ge and C; III. Preparation of Si1-yCy and Si1-x-yGexCy Layers by Molecular Beam Epitaxy; IV. Structural Properties; V. Optical Properties; VI. Electrical Transport Properties; VII. Summary/Devices; References; Index; Contents of Volumes in This Series. |
| Language |
English. |
| Subject |
Semiconductors.
|
|
Silicon.
|
|
Germanium.
|
|
Semiconductors |
|
Silicon |
|
Germanium |
|
Semi-conducteurs.
|
|
Silicium.
|
|
Germanium.
|
|
semiconductor.
|
|
silicon.
|
|
germanium.
|
|
TECHNOLOGY & ENGINEERING -- Electronics -- Solid State.
|
|
TECHNOLOGY & ENGINEERING -- Electronics -- Semiconductors.
|
|
Germanium
|
|
Semiconductors
|
|
Silicon
|
|
Semiconducteurs.
|
|
Semi-métaux.
|
|
Silicium.
|
|
Germanium.
|
| Added Author |
Hull, Robert, 1959-
|
|
Bean, John C. (John Condon), 1950-
|
| Other Form: |
Print version: Germanium silicon. San Diego : Academic Press, ©1999 012752164X 9780127521640 (OCoLC)40391761 |
| ISBN |
9780080864549 (electronic bk.) |
|
0080864546 (electronic bk.) |
|
012752164X (electronic bk.) |
|
9780127521640 (electronic bk.) |
|
1281715603 |
|
9781281715609 |
|
9786611715601 |
|
6611715606 |
| Standard No. |
DEBSZ 405322089 |
|
DEBSZ 48244357X |
|
