| Description |
1 online resource (6 p.) : col. ill. |
| Series |
Conference paper NREL/CP ; 5200-54200 |
|
Conference paper (National Renewable Energy Laboratory (U.S.)) ; 5200-54200.
|
| System Details |
Full text available via Internet in .pdf format. Adobe Acrobat Reader required. |
| Note |
Title from title screen (viewed Sept. 25, 2012). |
|
"June 2012." |
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"Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin Texas June 3-8, 2012." |
| Bibliography |
Includes bibliographical references (p. 5-6). |
| Summary |
We discuss results of our investigations toward understanding bulk and surface components of light-induced degradation (LID) in low-Fe c-Si solar cells. The bulk effects, arising from boron-oxygen defects, are determined by comparing degradation of cell parameters and their thermal recovery, with that of the minority-carrier lifetime (T) in sister wafers. We found that the recovery of T in wafers takes a much longer annealing time compared to that of the cell. We also show that cells having SiN:H coating experience a surface degradation (ascribed to surface recombination). The surface LID is seen as an increase in the q/2kT component of the dark saturation current (J02). The surface LID does not recover fully upon annealing and is attributed to degradation of the SiN:H-Si interface. This behavior is also exhibited by mc-Si cells that have very low oxygen content and do not show any bulk degradation. |
| Funding |
DE-AC36-08GO28308. |
| Subject |
Photovoltaic cells.
|
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Solar cells -- Materials.
|
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Silicon solar cells -- Defects.
|
| Added Author |
Sopori, Bhushan Lal.
|
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National Renewable Energy Laboratory (U.S.)
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MEMC Electronic Materials.
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New Jersey Institute of Technology.
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IEEE Photovoltaic Specialists Conference (38th : 2012 : Austin, Tex.)
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| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-5200-54200 |
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