| Description |
1 online resource (208 pages) : illustrations |
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text rdacontent |
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computer rdamedia |
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online resource rdacarrier |
| Bibliography |
Includes bibliographical references and index. |
| Summary |
"This one-stop study aid to TFETs is aimed at those who are beginning their study on TFETs and also as a guide for those who wish to design circuits using TFETs. The book covers the physics behind the functioning of the TFETs and their modelling for the purpose of circuit design and circuit simulation. It begins with a brief discussion on the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of the TFETs and their different structural configurations. After explaining the functioning of the TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help the new researchers in the area of TFETs, the book describes the process of carrying out numerical simulations of TFETs using TCAD. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterization"-- Provided by publisher. |
| Note |
Description based on print version record. |
| Subject |
Tunnel field-effect transistors.
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Integrated circuits -- Design and construction.
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Nanostructured materials.
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Low voltage integrated circuits.
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| Genre/Form |
Electronic books.
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| Added Author |
Vishnoi, Rajat, author.
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Pandey, Pratyush, author.
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| Other Form: |
Print version: Kumar, Mamidala Jagadesh. Tunnel field-effect transistors (TFET) : modelling and simulations. Hoboken : Wiley, 2017 9781119246299 |
| ISBN |
9781119246299 (hardback) |
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9781119246299 |
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9781119246305 (electronic bk.) |
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