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Author Luo, Peng, author.

Title GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / vorgelegt von Peng Luo.

Publication Info. Gottingen : Cuvillier Verlag, 2018.

Copies

Location Call No. OPAC Message Status
 Axe ProQuest E-Book  Electronic Book    ---  Available
Description 1 online resource (160 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Note Description based on print version record.
Subject Field-effect transistors -- Congresses.
Genre/Form Electronic books.
Other Form: Print version: Luo, Peng. GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements. Gottingen : Cuvillier Verlag, 2018 160 pages 9783736999060
ISBN 9783736999060
9783736989061 (e-book)

 
    
Available items only