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Author
Luo, Peng, author.
Title
GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements / vorgelegt von Peng Luo.
Publication Info.
Gottingen : Cuvillier Verlag, 2018.
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Available to Pittsburg State University patrons only.
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Axe ProQuest E-Book
Electronic Book
---
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Description
1 online resource (160 pages)
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Note
Description based on print version record.
Subject
Field-effect transistors -- Congresses.
Genre/Form
Electronic books.
Other Form:
Print version: Luo, Peng. GaN HEMT modeling including trapping effects based on Chalmers model and pulsed S-parameter measurements. Gottingen : Cuvillier Verlag, 2018 160 pages 9783736999060
ISBN
9783736999060
9783736989061 (e-book)
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