| Description |
1 online resource (224 p.). |
| Series |
Issn Ser. |
|
Issn Ser.
|
| Note |
Description based upon print version of record. |
| Contents |
Intro -- Roadmap for Skutterudites and Point Defects in GaN -- Copyright -- Contents -- Contributors -- Preface -- Chapter One: Roadmap for skutterudites: Prospective novel thermoelectrics -- 1. Current and future challenges -- 2. Advances in science and technology to meet challenges -- 3. Concluding remarks -- Acknowledgment -- References -- Chapter Two: Skutterudites: Prospective novel thermoelectrics -- 1. Introduction -- 2. Structural aspects and bonding -- 2.1. Binary skutterudites -- 2.2. Filled skutterudites -- 3. Band structure -- 4. Vibrational properties |
|
4.1. Phonon modes and the density of states -- 4.2. Evidence of ``rattling -- 5. Sample preparation aspects -- 6. Magnetic properties -- 6.1. Mössbauer spectroscopy -- 6.2. Magnetic susceptibility -- 7. Transport properties -- 7.1. Electronic transport -- 7.1.1. Binary skutterudites -- 7.2. Thermal conductivity -- 7.2.1. Binary skutterudites -- 7.2.2. Effect of doping -- 7.2.3. Solid solutions -- 7.2.4. Ternary skutterudites -- 7.2.5. Filled skutterudites -- 8. Conclusions -- Acknowledgments -- References -- Chapter Three: Roadmap for point defects in GaN -- 1. Status -- 1.1. Experiment |
|
1.2. Theory -- 2. Current and future challenges -- 3. Concluding remarks -- References -- Chapter Four: Point Defects in GaN -- 1. Introduction -- 2. Theoretical Predictions -- 3. Growth Methods and SIMS Analysis -- 4. Defects Revealed by PL -- 4.1. Phenomenological model -- 4.2. Configuration-coordinate model -- 4.3. Main PL bands in GaN -- 4.3.1. RL (1.81eV) band in undoped GaN -- 4.3.2. RL2 (1.8eV) and GL2 (2.35eV) bands in Ga-rich, high-resistivity GaN -- 4.3.3. YL (2.2eV) band in MOCVD and MBE GaN -- 4.3.4. YL (2.1-2.2eV) and GL (2.4eV) bands in HVPE GaN |
|
4.3.5. BL (2.9eV) band in undoped and Zn-doped GaN -- 4.3.6. BL2 (3.0eV) band in high-resistivity GaN -- 4.3.7. UVL (3.27eV) band -- 5. Point Defects Revealed by DLTS and Other Capacitance Techniques -- 5.1. Electron traps -- 5.2. Hole traps -- 5.2.1. Optical DLTS -- 5.2.2. Photoionization spectra -- 5.2.3. Identification of hole traps -- 6. Vacancy-Related Defects Revealed by PAS -- 7. Point Defects Revealed by Magnetic Resonance Techniques -- 8. Summary -- Acknowledgments -- References -- Index |
| Added Author |
Hoe Tan, Hark.
|
| Other Form: |
Print version: Mi, Zetian Roadmap for Skutterudites and Point Defects in GaN San Diego : Elsevier Science & Technology,c2022 9780323989336 |
| ISBN |
9780323989343 |
|
0323989349 |
|
