| Description |
1 online resource (274 p.). |
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Issn Ser. |
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Issn Ser.
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| Note |
Description based upon print version of record. |
| Contents |
Intro -- Diamond for Quantum Applications Part 2 -- Copyright -- Contents -- Contributors -- Preface -- Chapter One: Color center formation by deterministic single ion implantation -- 1. Introduction -- 2. Principles of ion implantation -- 2.1. 100kV implanter -- 2.2. Nanobeam -- 3. Deterministic implantation of single ions -- 3.1. Single ion detection -- 3.2. Nanoapertures -- 4. Creation and migration of vacancies -- 4.1. Creation of vacancies -- 4.2. Radiation-induced damage in diamond and thermal evolution of intrinsic defects -- 5. Charge-assisted engineering of color centers |
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6. Outlook -- Acknowledgments -- References -- Chapter Two: Advanced and in situ transmission electron microscopy of diamond: A review -- 1. Introduction -- 2. TEM for epitaxial CVD synthesis of diamond -- 2.1. Synthesis of diamond: Some fundamentals -- 2.2. CVD diamond heteroepitaxy on Si and SiC -- 2.2.1. Early stages of bias-assisted CVD synthesis: microstructure and interface phenomena -- 2.2.2. Microstructure phenomena and morphology during layer growth -- 2.2.3. Grain boundaries and defects in highly-oriented diamond films -- 2.2.4. Diamond-silicon and diamond-silicon carbide interfaces |
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2.3. CVD diamond heteroepitaxy on Ir (100) and on Ir (111) -- 2.3.1. Diamond synthesis on Ir (001): Early stages -- 2.3.2. Diamond synthesis on Ir (001): Layer growth -- 2.3.3. Diamond synthesis on Ir (111) -- 2.3.4. Toward improving wafer-scale single-crystal heteroepitaxy -- 2.4. Homoepitaxial CVD synthesis of diamond -- 3. Nanodiamond -- 4. Defects in diamond -- 4.1. Inclusions and voidites -- 4.2. Grain boundaries, stacking faults, platelets -- 4.3. Dislocations -- 4.4. Point defects and defect complexes -- 5. TEM for characterization of physical properties |
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5.1. In situ TEM deformation of diamond nanopillars -- 5.2. TEM in measurements of electronic properties -- 5.3. (S)TEM, PL and CL spectroscopy in characterizations of optical emission properties -- 5.4. Thermal conductivity of thin diamond films -- 6. TEM for process and device technology -- 7. Conclusions and outlook -- Acknowledgments -- References -- Chapter Three: Fundaments of photoelectric readout of spin states in diamond -- 1. Introduction: Photoelectric detection techniques for quantum physics -- 2. Photoelectric readout of NV spin |
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2.1. Photoelectric detection of NV magnetic resonances (PDMR): Physical principle -- 2.1.1. NV ionization mechanisms -- 2.1.2. Spin dependence of NV center ionization dynamics -- 2.2. Continuous-wave and pulsed PDMR experiments -- 2.2.1. Experimental implementation of PDMR -- 2.2.2. Photocurrent detection -- 2.2.3. Continuous-wave PDMR -- 2.2.4. Pulsed PDMR -- 2.3. Influence of diamond material properties on PDMR performance -- 2.3.1. Limitation of PDMR contrast by background photocurrent -- 2.3.2. Influence of diamond material properties on the photoelectric detection rate |
| Note |
2.4. Single NV spin photoelectric detection and applications. |
| Added Author |
Mizuochi, Norikazu.
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Hatano, Mutsuko.
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Nebel, Christoph E.
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| Other Form: |
Print version: Aharonovich, Igor Diamond for Quantum Applications Part 2 San Diego : Elsevier Science & Technology,c2020 9780323850247 |
| ISBN |
9780323850254 |
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0323850251 |
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