| Description |
1 online resource (4 p.) : col. ill. |
| Series |
NREL/CP ; 5200-50737 |
|
Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5200-50737.
|
| System Details |
Full text available via Internet in .pdf format. Adobe Acrobat Reader required. |
| Note |
Title from title screen (viewed on September 2, 2011). |
|
"July 2011." |
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"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011." |
| Bibliography |
Includes bibliographical references (p. 4). |
| Summary |
Using a 2D device simulation tool, we examine the high irradiance behavior of a single junction, GaAs concentrator cell as a function of the doping in the back surface confinement layer. The confinement layer is designed to be a barrier for both holes and electrons in the base of the solar cell. For a p-type base we show that the FF of the cell at high concentrations is a strong function of both the magnitude of the valence band offset and the doping level in the barrier. In short, for a given valence band offset (VBO), there is a critical barrier doping, below which the FF drops rapidly with lower doping. This behavior is confirmed experimentally for a GaInP/GaAs double heterostructure solar cell where the critical doping concentration (at 500 suns) in the back surface confinement layer is ~1e18 cm-3 for a VBO of 300 meV. |
| Funding |
DE-AC36-08GO28308 |
| Subject |
Photovoltaic cells -- Research.
|
|
Solar cells -- Research.
|
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Semiconductor doping.
|
| Added Author |
Steiner, Myles A.
|
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Kanevce, Ana.
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National Renewable Energy Laboratory (U.S.)
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IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
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| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-5200-50737 |
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