Description |
1 online resource (6 p.) : ill. |
Series |
NREL/CP ; 520-42525 |
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Conference paper (National Renewable Energy Laboratory (U.S.)) ; 520-42525.
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Type Of Report |
Conference paper; 11-16 May 2008. |
Note |
Title from title screen (viewed June 9, 2008). |
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"May 2008." |
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"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008." |
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"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under contract no. DE-AC36-99GO10337." |
Summary |
The stability of intrinsic and Al-doped single- and bi-layer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1-xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85 degrees C and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1-xMgxO >> ITO > F:SnO2. The degradation rates of Al:ZnO were slower for films of higher thickness, higher substrate temperature in sputter-deposition, and with dry-out intervals. As inferred from the optical micro-imaging showing the initiation and propagation of degrading patterns and regions, the degradation behavior appears similar for all TCOs, despite the obvious difference in the degradation rate. A degradation mechanism is proposed to explain the temporal process involving thermal hydrolysis. |
Bibliography |
Includes bibliographical references (p. 6). |
Funding |
PVB76701. |
Subject |
Photovoltaic cells -- Research.
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Thin films.
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Solar cells.
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Added Author |
Pern, F. J. (Fu-Jann), 1952-
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National Renewable Energy Laboratory (U.S.)
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Gpo Item No. |
0430-P-04 (online) |
Sudoc No. |
E 9.17:NREL/CP-520-42525 |
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