| Description |
4 p. : digital, PDF file |
| Series |
NREL/CP ; 520-39901
|
| System Details |
Mode of access via the NREL web site. |
| Note |
Title from title screen (viewed Sept. 21, 2007). |
|
"Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006." |
|
"May 2006." |
| Summary |
We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600C. We compare the results for HWCVD films of different film CH, and also for HWCVD and PECVD a-Si:H films containing the same initial film CH. We also perform Raman measurements on fully crystallized HWCVD films to explore whether film disorder plays a role in the different XRD FWHMs when different amounts of film hydrogen are evolved. |
| Form |
Full text available via Internet in .pdf format. Adobe Acrobat Reader required. |
| Subject |
Thin films -- Research.
|
|
Amorphous silicon.
|
| Added Author |
Mahan, A. Harv.
|
|
National Renewable Energy Laboratory (U.S.)
|
|
Colorado School of Mines.
|
|
Rijksuniversiteit te Utrecht.
|
| Added Title |
Hydrogenated amorphous silicon films |
| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-520-39901 |
|
