Kids Library Home

Welcome to the Kids' Library!

Search for books, movies, music, magazines, and more.

     
Available items only
E-Book/E-Doc
Author Cueto, J. A. del.

Title Degradation of photovoltaic modules under high voltage stress in the field [electronic resource] : preprint / J.A. del Cueto and S.R. Rummel.

Imprint Golden, CO : National Renewable Energy Laboratory, [2010]

Copies

Location Call No. OPAC Message Status
 Axe Federal Documents Online  E 9.17:NREL/CP-520-47463    ---  Available
Description 1 online resource (11 p.) : digital, PDF file
Series NREL/CP ; 520-47463
Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-520-47463.
Note Title from title screen (viewed Aug. 30, 2010).
"August 2010."
"To be presented at SPIE 2010 Optics and Photonics Conference, San Diego, California, August 1-5, 2010."
Bibliography Includes bibliographical references (p. 11).
Summary The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules -- tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules -- were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.
Subject Photovoltaic cells -- Testing.
Solar cells -- Research.
Added Author Rummel, Steve.
National Renewable Energy Laboratory (U.S.)
Other Form: Paper version: Cueto, J. A. del. Degradation of photovoltaic modules under high voltage stress in the field. 11 p. (OCoLC)670223381
Gpo Item No. 0430-P-04 (online)
Sudoc No. E 9.17:NREL/CP-520-47463

 
    
Available items only