| Description |
1 online resource ([44] p.) : ill. (some col.) |
| Series |
Subcontract report |
|
NREL/SR ; 520-46649.
|
| Note |
Title from title screen (viewed Sept. 24, 2009). |
|
"September 2009." |
| Bibliography |
Includes bibliographical references (p. 36-38). |
| Funding |
DE-AC36-08-GO28308. |
|
XXL-5-44205-09. |
|
PVB91110. |
| Summary |
We performed collaborative research with United Solar Ovonics Corporation on defects that contribute to the Staebler-Wronski effect in modules made using a-Si:H and a-SixGe1-x:H intrinsic layers. Specifically, we performed electron spin resonance on a set of device-quality samples, half of which were light-soaked. We also performed nuclear magnetic resonance experiments on these samples to investigate hydrogen doublet sites. In addition, we investigated the defects generated in tritiated a-Si:H at both 300 and 77 K in collaboration with scientists at NREL. Finally, we performed studies of light-soaking at 77 K to compare the kinetics with those for the creation of defects at 77 K by tritium decay. |
| Subject |
Photovoltaic cells -- Research.
|
|
Solar cells.
|
|
Thin films.
|
| Added Author |
Williams, G. A.
|
|
University of Utah.
|
|
National Renewable Energy Laboratory (U.S.)
|
| Gpo Item No. |
0430-P-05 (online) |
| Sudoc No. |
E 9.18:NREL/SR-520-46649 |
|
