| Description |
1 online resource (4 p.) : ill. (some col.) |
| Series |
NREL/CP ; 5200-50725 |
|
Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5200-50725.
|
| System Details |
Full text available via Internet in .pdf format. Adobe Acrobat Reader required. |
| Note |
Title from title screen (viewed August 8, 2011). |
|
"July 2011." |
|
"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011." |
| Bibliography |
Includes bibliographical references (p. 4). |
| Summary |
Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters. |
| Funding |
DE-AC36-08GO28308 |
| Subject |
Photovoltaic cells -- Research.
|
|
Silicon solar cells -- Design and construction.
|
|
Photoluminescence.
|
| Added Author |
Yan, Fei.
|
|
National Renewable Energy Laboratory (U.S.)
|
|
Colorado State University.
|
|
Calisolar.
|
|
IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
|
| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-5200-50725 |
|
