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Title On the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of a-Si:H films [electronic resource] : preprint / A.H. Mahan ... [et al.].

Imprint Golden, CO : National Renewable Energy Laboratory, [2006]

Copies

Location Call No. OPAC Message Status
 Axe Federal Documents Online  E 9.17:NREL/CP-520-39901    ---  Available
Description 4 p. : digital, PDF file
Series NREL/CP ; 520-39901
System Details Mode of access via the NREL web site.
Note Title from title screen (viewed Sept. 21, 2007).
"Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."
"May 2006."
Summary We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600C. We compare the results for HWCVD films of different film CH, and also for HWCVD and PECVD a-Si:H films containing the same initial film CH. We also perform Raman measurements on fully crystallized HWCVD films to explore whether film disorder plays a role in the different XRD FWHMs when different amounts of film hydrogen are evolved.
Form Full text available via Internet in .pdf format. Adobe Acrobat Reader required.
Subject Thin films -- Research.
Amorphous silicon.
Added Author Mahan, A. Harv.
National Renewable Energy Laboratory (U.S.)
Colorado School of Mines.
Rijksuniversiteit te Utrecht.
Added Title Hydrogenated amorphous silicon films
Gpo Item No. 0430-P-04 (online)
Sudoc No. E 9.17:NREL/CP-520-39901

 
    
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