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Author Mikla, Victor I.

Title Trap level spectroscopy in amorphous semiconductors / Viktor I. Mikla.

Imprint Oxford : Elsevier, 2010.

Copies

Location Call No. OPAC Message Status
 Axe Elsevier ScienceDirect Ebook  Electronic Book    ---  Available
Description 1 online resource
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Series Elsevier insights
Elsevier insights.
Summary Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most used spectroscopic techniques but also describes their advantages and disadvantages. Provides information on the most common spectroscopic techniques Discusses the advantages and disadvantages of each technique.
Contents Thermally stimulated depolarization currents in amorphous chalcogenides -- Carrier transport processes in amorphous solids -- Time-of-flight experiments in amorphous chalcogenide semiconductors -- Xerographic spectroscopy of states in mobility gap -- Photoinduced effects on states in the mobility gap -- Spectroscopic studies of gap states and laser-induced structural transformations in se-based as-free amorphous semiconductors.
Note Print version record.
Bibliography Includes bibliographical references.
Subject Amorphous semiconductors -- Spectra.
Amorphous semiconductors -- Defects -- Analysis.
Deep level transient spectroscopy.
Semi-conducteurs amorphes -- Spectre.
Semi-conducteurs amorphes -- Défauts -- Analyse.
Spectroscopie DLTS.
Deep level transient spectroscopy
Other Form: Print version: Mikla, Victor I. Trap level spectroscopy in amorphous semiconductors. Oxford : Elsevier, 2010 9780123847157 012384715X (OCoLC)567148516
ISBN 9780123847157
012384715X
Standard No. DEBBG BV039827466
DEBBG BV042316715
DEBSZ 367745755
NZ1 13517264
NZ1 15187959
AU@ 000064441704

 
    
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