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Controlled growth of GaN columns and 3D core-shell LEDs by MOVPE

Wang, Xue, author.
Gottingen, [Germany] : Cuvillier Verlag, 2015. 2015

CVD solutions for new directions in SiC and GaN epitaxy

Li, Xun, author.
Linkoping, Sweden : Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University, 2015. 2015

Device characterization and modeling of large-size GaN HEMTs

Flores, Jaime Alberto Zamudio.
Kassel : Kassel University Press, 2012. 2012

Gallium nitride & related wide bandgap materials & devices : a market and technology overview 1998-2

Szweda, Roy.
Oxford, UK ; New York : Elsevier Advanced Technology, 2000. 2000

Gallium nitride (GaN) I

[Place of publication not identified] : Academic Press, ©1997. 1997

Gallium nitride (GaN).

San Diego ; London : Academic, ©1999. 1999

GaN-based materials and devices growth, fabrication, characterization and performance

Singapore ; River Edge, N.J. : World Scientific, c2004. 2004

GaN transistors for efficient power conversion

Chichester, England : Wiley, 2015. 2015

Nitride semiconductor devices fundamentals and applications

Morkoc, Hadis.
Weinheim : Wiley-VCH, 2013. 2013