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Author
Nosaeva, Ksenia, author.
Title
Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva.
Publication Info.
Gottingen, [Germany] : Cuvillier Verlag, 2016.
2016
Connect to
Available to Pittsburg State University patrons only.
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Location
Call No.
OPAC Message
Status
Axe ProQuest E-Book
Electronic Book
---
Available
Edition
1. Auflage.
Description
1 online resource (155 pages) : illustrations (some color), tables, graphs.
text rdacontent
computer rdamedia
online resource rdacarrier
Series
Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ; Band 36
Bibliography
Includes bibliographical references.
Note
Description based on online resource; title from PDF title page (ebrary, viewed September 29, 2017).
Subject
Modulation-doped field-effect transistors.
Genre/Form
Electronic books.
Other Form:
Print version: Nosaeva, Ksenia. Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz. 1. Auflage. Gottingen, [Germany] : Cuvillier Verlag, c2016 viii, 143 pages Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ; Band 36 9783736992870
ISBN
9783736992870
9783736982871 (e-book)
Available items only
