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2D Semiconductor Materials and Devices

San Diego, California : Elsevier, 2019. 2019

Addressing United States investments in certain national security technologies and products in count

United States. President (2021- : Biden), author.
Washington, DC : United States Government Publishing Office, 2023. 2023

Advanced semiconductor and organic nano-techniques

Amsterdam ; San Diego, Calif. : Academic Press, 2003. 2003

Advances in III-V semiconductor nanowires and nanodevices

[Oak Park, Ill.?] : Bentham eBooks, [2011] 2011

Advances in photovoltaics .

San Diego, Calif. : Elsevier, 2012. 2012

Advances in semiconductor nanostructures : growth, characterization, properties and applications

Amsterdam, Netherlands : Elsevier, 2017. 2017

Advances in silicon carbide processing and applications

Boston : Artech House, c2004. 2004

Basic principles of electronics.

Jenkins, J., author.
Oxford, England : Pergamon Press, 1971. 1971

Breakdown phenomena in semiconductors and semiconductor devices

Levinshtein, M. E. (Mikhail Efimovich)
New Jersey ; London : World Scientific, c2005. 2005

Characterization of semiconductor heterostructures and nanostructures

Amsterdam ; Oxford : Elsevier, 2008. 2008

CMOS RF modeling, characterization and applications

River Edge, N.J. : World Scientific, c2002. 2002

Compound semiconductor bulk materials and characterizations

Oda, O.
New Jersey : World Scientific, c2007. 2007

Comprehensive semiconductor science and technology

Amsterdam ; London : Elsevier Science, 2011. 2011

Device electronics for integrated circuits

Muller, Richard S.
New York, N.Y. : Wiley, c1977. 1977

Device physics

Amsterdam, [Netherlands] ; New York, N.Y. : North-Holland Pub. Co. : sole distributors for the USA and Canada, Elsevier North-Holland, c1981. 1981

Dilute nitride semiconductors

Henini, Mohamed.
Amsterdam : Elsevier, 2005. 2005

Discrete military operation data.

[Phoenix, Ariz.] : Motorola, c1992. 1992

Discrete military operation data.

Phoenix, Ariz. : Motorola, c1990. 1990

Discrete military operation handbook.

[Phoenix, Ariz.] : Motorola, 1990. 1990

Discrete/transistor circuit sourcemaster

Sessions, Ken W.
New York, N.Y. : Wiley, c1978. 1978

Electrochemistry at metal and semiconductor electrodes

Sat, Norio, 1927-
Amsterdam ; New York : Elsevier, 1998. 1998

Electronics : BJTs, FETs, and MICROCIRCUITS

Angelo, Ernest James.
New York, N.Y. : McGraw-Hill, [1969] 1969

Far infrared transmission and photoconductivity on single layered and tunneling coupled two-dimensio

Holland, Steffen, author.
Gottingen, [Germany] : Cuvillier Verlag, 2004. 2004

From semiclassical semiconductors to novel spintronic device

Sharjah, U.A.E. : Bentham Science Publishers, [2013] 2013

Full-spectrum responsive photocatalytic materials : from fundamentals to applications

Wang, Chuanyi, author.
Cambridge, MA : Woodhead Publishing, an imprint of Elsevier, 2024. 2024

Fundamentals of silicon carbide technology : growth, characterization, devices and applications

Kimoto, Tsunenobu, 1963- author.
Singapore : IEEE : Wiley, 2014. 2014

Fundamentals of solid-state electronics

Pascoe, Robert D., 1943-
New York, N.Y. : Wiley, c1976. 1976

Gallium nitride (GaN).

San Diego ; London : Academic, ©1999. 1999

GaN-based materials and devices growth, fabrication, characterization and performance

Singapore ; River Edge, N.J. : World Scientific, c2004. 2004

Germanium silicon : physics and materials

San Diego : Academic Press, ©1999. 1999

Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electroni

Amsterdam ; Boston : Elsevier, ©2008. 2008

High pressure in semiconductor physics

San Diego : Academic Press, ©1998. 1998

High pressure in semiconductor physics.

San Diego : Academic Press, ©1998. 1998

High-speed heterostructure devices from device concepts to circuit modeling

Roblin, Patrick, 1958-
Cambridge ; New York : Cambridge University Press, 2002. 2002

Identification of defects in semiconductors.

San Diego : Academic Press, ©1998. 1998

Ii-Vi semiconductor blue/green light emitters: device physics and epitaxial growth

New York : Academic Press, 1997. 1997

III-Nitride Semiconductor Optoelectronics

Cambridge, MA : Academic Press is an imprint of Elsevier, 2017. 2017

Industry standard FDSOI compact model BSIM-IMG for IC design

Cambridge, MA : Woodhead Publishing, [2019] 2019

Intense terahertz excitation of semiconductors

Ganichev, S. D.
Oxford ; New York : Oxford University Press, 2006. 2006

Intrinsic DX centers in ternary chalcopyrite semiconductors "why metastable intrinsic defects cause

Lany, Stephan.
[Golden, Colo.] : National Renewable Energy Laboratory, [2008?] 2008

Introduction to electronics for technologists

Hoffman, John Paul.
Boston : Houghton Mifflin, c1978. 1978

Ion implantation and activation.

Suzuki, Kunihiro.
Sharjah, U.A.E. ; Oak Park, Illinois : Bentham Science Publishers, [2013] 2013

Laser annealing processes in semiconductor technology : theory, modeling and applications in nanoele

Oxford : Woodhead Publishing, 2021. 2021

Localization effects in disordered III-V semiconductor nanostructures

Shakfa, Mohammad Khaled, author.
Gottingen, [Germany] : Cuvillier Verlag, 2015. 2015

Materials for high-temperature semiconductor devices

Washington, D.C. : National Academy Press, c1995. 1995

Materials for semiconductor functions

Bylander, E. G.
New York, N.Y. : Hayden Book Co., [1971] 1971

MECL system design handbook

Blood, William R.
[Phoenix, Ariz.] : Motorola, c1972. 1972

Memory design handbook

Intel Corporation.
Santa Clara, Calif. : Intel Corp., c1977. 1977

Metal-induced crystallization : fundamentals and applications

Boca Raton, Florida : Pan Stanford Publishing : CRC Press, 2015. 2015

Metal semiconductor core-shell nanostructures for energy and environmental applications

Amsterdam, Netherlands : Elsevier, 2017. 2017