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E-Book/E-Doc

Author

Honsberg, Christiana B.

Title Novel high efficiency photovoltaic devices based on the III-N material system [electronic resource] : final technical report, 7 December 2005 - 29 August 2008 / C. Honsberg, W.A. Doolittle, and I. Ferguson.

Imprint

Golden, Colo. : National Renewable Energy Laboratory, [2008]

Connect to
Connect to https://permanent.fdlp.gov/LPS108375/LPS108375/www.nrel.gov/docs/fy09osti/44186.pdf
Connect to https://www.nrel.gov/docs/fy09osti/44186.pdf

Copies

Location	Call No.	OPAC Message	Status
Axe Federal Documents Online	E 9.18:NREL/SR-520-44186	---	Available

Description	11 p. : digital, PDF file
System Details	Mode of access: Internet from the NREL web site.
Note	Title from title screen (viewed October 21, 2008).
	"October 2008."
Summary	The current work by University of Delaware researchers sought to understand InGaN as the potential material for photovoltaics. Phase separation was identified as a key loss mechanism. Phase-separated material (a lower bandgap) controls the open-circuit voltage, while the non-phase separated material (higher bandgap) controls the absorption. Phase separation in InGaN layers was controlled via optimization of growth conditions and device thickness.
Subject	Photovoltaic cells -- Research.
	Solar cells -- Design and construction.
Added Author	Doolittle, W. A.
	Ferguson, Ian T.
	National Renewable Energy Laboratory (U.S.)
Added Title	Novel high efficiency pv devices based on the 3-nitride material system
Gpo Item No.	0430-P-05 (online)
Sudoc No.	E 9.18:NREL/SR-520-44186