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Author Nuedeck, Philip G., author.

Title Fast risetime reverse bias pulse failures in SiC PN junction diodes / Philip G. Nuedeck, Christian Faziz, James D. Parsons.

Publication Info. Cleveland, Ohio : National Aeronautics and Space Administration, Lewis Research Center, June 1996.

Copies

Location Call No. OPAC Message Status
 Axe Federal Documents Online  NAS 1.15:107256    ---  Available
Description 1 online resource (6 pages) : illustrations.
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Series NASA technical memorandum ; 107256
NASA technical memorandum ; 107256.
Note Title from title screen (viewed July 12, 2016).
"June 1996"--Report documentation page.
"Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, June 9-14, 1996."
"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
Bibliography Includes bibliographical references (page 6).
Funding Sponsored by the National Aeronautics and Space Administration WU-505--62-50 E-10317
Subject P-N junctions.
Semiconductors (Materials)
Silicon carbides.
High temperature environments.
Bias.
Doped crystals.
Energy gaps (Solid state)
Added Author Faziz, Christian, author.
Parsons, James D., author.
Lewis Research Center, issuing body.
United States. National Aeronautics and Space Administration, sponsoring body.
Other Form: Microfiche version: Nuedeck, Philip G. Fast risetime reverse bias pulse failures in SiC PN junction diodes (OCoLC)39668882
Gpo Item No. 0830-H-15 (online)
Sudoc No. NAS 1.15:107256

 
    
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