Design of Shallow p-type Dopants in ZnO (Presentation) [electronic resource] / Su-Huai Wei, J. Li, and Y. Yan
Imprint
Washington, D.C. : United States. Dept. of Energy ; Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008.
Published through the Information Bridge: DOE Scientific and Technical Information.
05/01/2008.
Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.
National Renewable Energy Laboratory (NREL), Golden, CO.
Summary
ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
