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Author
Niedra, Janis M.
Title
Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 C [electronic resource] / Janis M. Niedra.
Imprint
Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2006]
Connect to
Connect to https://permanent.fdlp.gov/lps126907/CR-2006-214257.pdf
Copies
Location
Call No.
OPAC Message
Status
Axe Federal Documents Online
NAS 1.26:2006-214257
---
Available
Description
1 online resource (6 p.) : ill.
Series
NASA/CR- ; 2006-214257
NASA contractor report ; NASA CR-214257.
Note
Title from title screen (viewed on Oct. 20, 2010).
"November 2006."
Funding
NAS3-98008
NAS3-00145
WBS 423799.03.01
Subject
Junction transistors.
High temperature.
Bipolar transistors.
Switching.
Static loads.
Electric potential.
Added Author
NASA Glenn Research Center.
Gpo Item No.
0830-H-14 (online)
Sudoc No.
NAS 1.26:2006-214257
Available items only
