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Title Ferroelectricity in doped hafnium oxide : materials properties and devices / edited by Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo.

Publication Info. Duxford : Woodhead Publishing, [2019]

Copies

Location Call No. OPAC Message Status
 Axe Elsevier ScienceDirect Ebook  Electronic Book    ---  Available
Edition First edition.
Description 1 online resource : illustrations
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
Series Woodhead Publishing series in electronic and optical materials
Woodhead Publishing series in electronic and optical materials.
Note Includes index.
Print version record.
Summary Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
Bibliography Includes bibliographical references and index.
Subject Metal oxide semiconductors.
Hafnium oxide.
Hafnium oxide -- Electric properties.
Ferroelectricity.
MOS (Électronique)
Ferroélectricité.
TECHNOLOGY & ENGINEERING -- Mechanical.
Ferroelectricity
Hafnium oxide
Metal oxide semiconductors
Genre/Form Electronic books.
Added Author Schroeder, Uwe, editor
Hwang, Cheol Seong, editor.
Funakubo, Hiroshi, editor.
Other Form: Print version: FERROELECTRICITY IN DOPED HAFNIUM OXIDE. [Place of publication not identified], WOODHEAD, 2019 0081024304 (OCoLC)1051137546
ISBN 9780081024317 (electronic bk.)
0081024312 (electronic bk.)
0081024304
9780081024300
Standard No. AU@ 000065139132
UKMGB 019308760

 
    
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