| Description |
1 online resource (xv, 307 pages) : illustrations |
|
text txt rdacontent |
|
computer c rdamedia |
|
online resource cr rdacarrier |
| Series |
Semiconductors and semimetals ; v. 63 |
|
Semiconductors and semimetals ; v. 63.
|
| Bibliography |
Includes bibliographical references and index. |
| Note |
Print version record. |
| Summary |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. |
| Access |
Use copy Restrictions unspecified star MiAaHDL |
| Reproduction |
Electronic reproduction. [Place of publication not identified] : HathiTrust Digital Library, 2010. MiAaHDL |
| System Details |
Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL |
| Processing Action |
digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL |
| Contents |
Front Cover; Chemical Mechanical Polishing in Silicon Processing; Copyright Page; Contents; Preface; List of Contributors; Chapter 1. Introduction; I. CMP: A Unique and Evolving Semiconductor Fabrication Technology-Past, Present, and Future; Chapter 2. Equipment; I. Introduction; II. CMP Equipment Design Evolution; III. Carriers; IV. Platens; V. Pad Conditioning; VI. CMP Equipment Integration; VII. Copper Polishing and CMP Tool Requirements; VIII. 300-mm CMP Tools; IX. Conclusion; References; Chapter 3. Facilitization; I. Introduction; II. Outline; III. Slurry Distribution System Overview. |
|
IV. Slurry HandlingV. Slurry Distribution Systems; VI. Slurry Dispense Engines; VII. Slurry Blending Technology; VIII. Slurry Measuring Techniques; IX. Daytank Replenishment; X. Mix Order; XI. Piping Systems; XII. Piping System Variations; XIII. Materials of Construction; XIV. Slurry Settling; XV. Slurry Room Location; XVI. Pressure and Flow Consistency; XVII. Back-Pressure Devices; XVIII. Slurry Consumption Ramp; XIX. System Redundancy; XX. Valve Boxes; XXI. Storage Tanks; XXII. Agitation; XXIII. Metrology; XXIV. Filtration; XXV. Slurry System Maintenance; XXVI. Waste Disposal; References. |
|
Chapter 4. Modeling and SimulationI. Introduction; II. Wafer-Scale Models; III. Patterned Wafer CMP Modeling; IV. Die-Level Modeling of Ild CMP; V. Models for Metal Polishing; VI. Summary and Status; References; Chapter 5. Consumables I: Slurry; I. Introduction; II. Abrasives; III. Slurry Solution; IV. Comparisons Among Slurries; References; Chapter 6. CMP Consumablesii: Pad; I. Introduction; II. Classes of Pads and Their Manufacture; III. Structure, Properties, and Their Relationship to the Polishing Process; IV. Application to Semiconductor Processing; References; Chapter 7. Post-CMP Clean. |
|
I. IntroductionII. Surface Configurations after CMP Processes; III. Cleaning Requirements after CMP Processes; IV. Corrosion Effects; V. Slurry Removal; VI. Metallic Contamination Removal; VII. Damaged Layer Removal; VIII. Final Passivation; IX. Examples of Practical Post-CMP Cleaning Processes; X. Conclusion; References; Chapter 8. CMP Metrology; I. Introduction; II. Reflectometry; III. Defectivity Monitoring; IV. Noncontact Capacitive Measurement; V. Total X-Ray Fluorescence; VI. Stylus Profilometry (Force Measurement); VII. Atomic Force Microscopy; VIII. Four-Point Probe; References. |
|
Chapter 9. Applications and CMP-Related Process ProblemsI. Introduction; II. Oxide CMP Within-Wafer Nonuniformity (WIWNU); III. Post-CMP Oxide Thickness Control; IV. Defectivity; V. Tungsten CMP Problems; VI. Other Problems; References; Index; Contents of Volumes in This Series. |
| Subject |
Grinding and polishing.
|
|
Silicon.
|
|
Silicon |
|
Silicium.
|
|
silicon.
|
|
TECHNOLOGY & ENGINEERING -- Technical & Manufacturing Industries & Trades.
|
|
Grinding and polishing
|
|
Silicon
|
|
Fisica geral.
|
|
Silicium.
|
|
Semiconducteurs.
|
| Added Author |
Li, Shin Hwa.
|
|
Miller, Robert O., 1947-
|
| Other Form: |
Print version: Chemical mechanical polishing in silicon processing. San Diego, CA : Academic Press, ©2000 0127521720 9780127521725 (OCoLC)42707637 |
| ISBN |
9780080864617 (electronic bk.) |
|
0080864619 (electronic bk.) |
|
0127521720 (electronic bk.) |
|
9780127521725 (electronic bk.) |
| Standard No. |
DEBSZ 405322119 |
|
DEBSZ 482443626 |
|
GBVCP 878890890 |
|
