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Title III-nitride : semiconductor materials / editor, Zhe Chuan Feng.

Imprint London : Imperial College Press ; Singapore ; Hackensack, NJ : Distributed by World Scientific, ©2006.


Location Call No. OPAC Message Status
 Axe Books 24x7 Engineering E-Book  Electronic Book    ---  Available
Description 1 online resource (xii, 428 pages) : illustrations
text txt rdacontent
computer c rdamedia
online resource cr rdacarrier
data file rda
Bibliography Includes bibliographical references.
Contents Cover -- Contents -- Preface -- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials -- 1. Introduction -- 2. Experiment -- 3. Material Properties -- 3.1. Undoped GaN layers -- 3.2. Si-doped GaN layers -- 3.3. Mg-doped GaN layers -- 3.4. Zn-doped GaN layers -- 3.5. AlN layers -- 3.6. AlGaN layers -- 3.7. InN and InGaN layers -- 4. New directions in HVPE development -- 4.1. Large area and multi wafer HVPE growth -- 4.2. Multi-layer structures -- 4.3. P-n junctions -- 4.4. Structures with two dimensional carrier gas -- 4.5. Nano structures and porous materials -- 5. Applications of HVPE grown group III nitride materials -- 5.1. Substrate applications -- 5.2. Device Applications -- 6. Conclusions -- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials -- 1. History of Reactor Development for III-Nitrides.
Summary III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.
Note Print version record.
Subject Semiconductors -- Materials.
Nitrures -- Propriétés électriques.
Électronique -- Matériaux.
Dépôt en phase vapeur par organométalliques.
SCIENCE -- Chemistry -- Physical & Theoretical.
Nitrides. (OCoLC)fst01037993
Semiconductors -- Materials. (OCoLC)fst01112237
Genre/Form Electronic book.
Electronic books.
Added Author Feng, Zhe Chuan.
Other Form: III-nitride. London : Imperial College Press ; Singapore ; Hackensack, NJ : Distributed by World Scientific, ©2006 1860946364 (DLC) 2006299211 (OCoLC)70160598
ISBN 1860946364
1860949037 (ebook)
9781860949036 (ebook)
Standard No. AU@ 000051372064
AU@ 000058361109
DEBBG BV043133486
DEBBG BV044179550
DEBSZ 422167347
DEBSZ 431680248
GBVCP 802739202
NZ1 12889020

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