| Description |
1 online resource (xx, 491 pages) : illustrations |
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text txt rdacontent |
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computer c rdamedia |
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online resource cr rdacarrier |
| Series |
Semiconductors and semimetals, 0080-8784 ; v. 72 |
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Semiconductors and semimetals ; v. 72. 0080-8784
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| Bibliography |
Includes bibliographical references and index. |
| Contents |
1: CVD Technologies for Silicon: A Quick Survey -- 2: Epitaxial Growth Theory: Vapor-Phase Chemistry and Doping -- 3: Epitaxial Growth Facilities, Equipment, and Supplies -- 4: Epitaxial Growth Techniques -- 5: Epitaxial Growth Techniques: Molecular Beam Epitaxy -- 6: Epitaxial Growth Modeling -- 7: Epitaxial Layer Characterization and Metrology -- 8: Epitaxy for Discretes and Power Devices -- 9: Epitaxy on Patterned Wafers -- 10: Si-Based Alloys: SiGe and SiGe:C -- 11: Silicon Epitaxy: New Applications. |
| Summary |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. |
| Note |
Print version record. |
| Subject |
Semiconductors -- Design and construction.
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Silicon crystals -- Growth.
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Epitaxy.
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Silicium cristallisé -- Croissance.
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Épitaxie.
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SCIENCE -- Physics -- Electricity.
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Epitaxy
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Semiconductors -- Design and construction
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Silicon crystals -- Growth
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| Added Author |
Crippa, Danilo.
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Rode, Daniel L.
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Masi, Maurizio.
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| Other Form: |
Print version: Silicon epitaxy. San Diego : Academic Press, ©2001 012752181X 9780127521817 (OCoLC)48213532 |
| ISBN |
9780080541006 (electronic bk.) |
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0080541003 (electronic bk.) |
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012752181X (electronic bk.) |
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9780127521817 (electronic bk.) |
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1281057169 |
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9781281057167 |
| Standard No. |
DEBSZ 405316682 |
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