| Description |
1 online resource (xx, 627 pages) : illustrations. |
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text txt rdacontent |
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computer c rdamedia |
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online resource cr rdacarrier |
| Series |
Woodhead Publishing in materials |
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Woodhead Publishing in materials.
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| Bibliography |
Includes bibliographical references and index. |
| Note |
Print version record. |
| Summary |
Annotation Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructuresreviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapor deposition. This part also includes chapters covering strain engineering and modeling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices -- Source other than Library of Congress. |
| Contents |
Part 1 Introduction: Structural properties of silicon-germanium (SiGe) nanostructures -- Electronic band structures of SiGe alloys. Part 2 Formation of nanostructures: Understanding crystal growth mechanisms in SiGe nanostructures -- Types of SiGe bulk crystal growth methods and their applications -- SiGe crystal growth using molecular beam epitaxy -- SiGe crystal growth using chemical vapour deposition -- Strain engineering of SiGe virtual substrates -- Formation of silicon-germanium-on-insulator (SGOI)substrates -- Miscellaneous methods and materials for SiGe based heterostructures -- Modelling the evolution of germanium islands on silicon(001) thin films -- Strain engineering of SiGe micro- and nanostructures. Part 3 Material properties of SiGe nanostructures: Self-diffusion and dopant diffusion in germanium (Ge) and SiGe alloys -- Dislocations and other strain-induced defects in SiGe nanostructures -- Transport properties of SiGe nanostructures at low temperatures -- Transport properties of SiGe nanostructures and applications in devices -- Microcavities and quantum cascade laser structures based on SiGe nanostructures -- Silicide and germanide technology for interconnections in ultra large scale integrated (ULSI) applications. Part 4 Devices using Si, Ge and SiGe alloys: SiGe heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies -- SiGe-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies -- High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs) -- Silicon (Si) and germanium (Ge) in optical devices -- Spintronics of nanostructured MnGe dilute magnetic semiconductor. |
| Subject |
Nanostructured materials.
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Silicon alloys.
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Germanium alloys.
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Electronic circuits.
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Nanoelectronics.
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Nanostructures |
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Nanomatériaux.
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Silicium -- Alliages.
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Germanium -- Alliages.
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Circuits électroniques.
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Nanoélectronique.
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TECHNOLOGY & ENGINEERING -- Mechanical.
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Electronic circuits
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Germanium alloys
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Nanoelectronics
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Nanostructured materials
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Silicon alloys
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Germaniumverbindungen
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Nanostrukturiertes Material
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Siliciumhalbleiter
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| Added Author |
Shiraki, Yasuhiro, 1942-
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Usami, Noritaka.
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| Other Form: |
Print version: Silicon-germanium (SiGe) nanostructures. Cambridge, UK : Philadelphia, PA : Woodhead Pub., 2011 9781845696894 (OCoLC)666239787 |
| ISBN |
9781613443729 (electronic bk.) |
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1613443722 (electronic bk.) |
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0857091425 (electronic bk.) |
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9780857091420 (electronic bk.) |
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9781845696894 |
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1845696891 |
| Standard No. |
AU@ 000049162562 |
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DEBBG BV042316729 |
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DEBSZ 365386324 |
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DEBSZ 392366878 |
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NZ1 14534037 |
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NZ1 15622278 |
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AU@ 000070479686 |
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