| Description |
1 online resource (xiv, 351 pages) : illustrations |
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text txt rdacontent |
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computer c rdamedia |
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online resource cr rdacarrier |
| Series |
Semiconductors and semimetals ; v. 49 |
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Semiconductors and semimetals ; v. 49.
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| Bibliography |
Includes bibliographical references and index. |
| Note |
Print version record. |
| Summary |
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry |
| Access |
Use copy Restrictions unspecified star MiAaHDL |
| Reproduction |
Electronic reproduction. [Place of publication not identified] : HathiTrust Digital Library, 2010. MiAaHDL |
| System Details |
Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL |
| Processing Action |
digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL |
| Contents |
Front Cover; Light Emission in Silicon: From Physics to Devices; Copyright Page; Contents; List of Contributors; Abstract; Preface; Chapter 1. Light Emission in Silicon; I. Introduction; II. The Optoelectronic Age; III. Physical Properties of Si; IV. Methods for Overcoming the Indirect Bandgap Limitations in Si; V. Prospects for Si Based Optoelectronic Devices; References; Chapter 2. Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures; I. Introduction; II. Structural Properties; Ill. Bandgaps, Band Offsets, and Brillouin Zone Folding. |
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IV. Photoluminescence, Electroluminescence, and Photocurrent MeasurementsV. Concluding Remarks; Acknowledgments; References; Chapter 3. Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices; I. Introductory Concepts; II. Isoelectronic Bound Exciton Emission from c-Si; III. Isoelectronic Bound Exciton Emission in Be-Doped SiGe Alloys: A Case Study; IV. Device Considerations; V. Concluding Remarks; References; Chapter 4. Erbium in Silicon; I. Introduction; II. Er Doping of Si; III. Diffusivity and Solubility; IV. Light Emission; V. Electronic Structure. |
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VI. Light Emitting Diode DesignVII. Summary; Acknowledgments; References; Chapter 5. Silicon and Germanium Nanoparticles; I. Introduction; II. Fabrication of Silicon (Si) and Germanium (Ge) Nanoparticles; III. Photoluminescence Mechanism; IV. Unique Optical Phenomena; V. Summary; Acknowledgments; References; Chapter 6. Porous Silicon: Photoluminescence and Electroluminescent Devices; I. Introduction; II. Properties of the PL Bands; III. Origin of the Intrinsic PL Bands; IV. Pure Quantum Confinement and Surface States: A Critical Discussion; V. Nonoptical Properties. |
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VI. Electroluminescent DevicesVII. Conclusions and Outlook; Chapter 7. Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites; I. Introduction; II. Electronic Properties; III. Optical Transitions and Radiative Lifetime; IV. Exchange Splitting and Symmetry of the Crystallites; V. Atomic Relaxation, Stokes Shift, and Self-trapped Exciton; VI. Nonradiative Recombination; VII. Screening in Nanocrystallites and Coulomb Charging Effects; VIII. Conclusion; References; Chapter 8. Silicon Polymers and Nanocrystals; I. Introduction. |
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II. Silicon Polymers in One, Two, and Three DimensionsIII. Passivated Silicon Nanocrystals; IV. Electron Transport in Porous Nanocrystal Materials; Acknowledgments; References; Index; Contents of Volumes in This Series. |
| Subject |
Silicon -- Optical properties.
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Semiconductors -- Optical properties.
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Silicium -- Propriétés optiques.
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Semi-conducteurs -- Propriétés optiques.
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SCIENCE -- Chemistry -- Inorganic.
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Semiconductors -- Optical properties
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Silicon -- Optical properties
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| Added Author |
Lockwood, David J.
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| Other Form: |
Print version: Light emission in silicon. San Diego : Academic Press, ©1998 0127521577 9780127521572 (OCoLC)37790735 |
| ISBN |
9780080864464 (electronic bk.) |
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0080864465 (electronic bk.) |
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0127521577 (electronic bk.) |
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9780127521572 (electronic bk.) |
| Standard No. |
DEBSZ 405322070 |
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DEBSZ 482443561 |
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GBVCP 878890866 |
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