| Description |
1 online resource (322 pages) |
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text txt rdacontent |
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computer c rdamedia |
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online resource cr rdacarrier |
| Series |
Materials Today
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| Note |
Print version record. |
| Contents |
Front Cover; Spintronic 2D Materials; Copyright Page; Contents; List of contributors; Preface; 1 Introduction to spintronics and 2D materials; 1.1 Spin and spin ordering; 1.2 The discovery of giant magnetoresistance and tunnelling magnetoresistance; 1.3 Semiconductor spintronics: dilute magnetic semiconductor and spin field-effect transistor; 1.4 2D materials and magnetism in 2D materials; 1.5 Overview of this book; References; 2 Rashba spin-orbit coupling in two-dimensional systems; 2.1 The origin of Rashba spin-orbit coupling; 2.1.1 From Dirac to Pauli ... ; 2.1.2 ... and back again |
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2.1.3 Spin-splitting in semiconducting quantum wells2.1.4 Metallic surfaces; 2.1.5 Induced Rashba spin-orbit coupling; 2.1.6 Topological insulators; 2.1.7 Topological semimetals; 2.2 Fundamental signatures; 2.2.1 Energy dispersion and spin texture; 2.2.2 Electron dipole spin resonance; 2.2.3 Quantum oscillations; 2.2.4 Weak antilocalization; 2.3 Spin-orbit transport; 2.3.1 Spin-charge conversion effects; 2.3.2 Persistent spin helix; 2.3.3 Spin and charge pumping; 2.3.4 Zitterbewegung effect; 2.3.5 Quantum anomalous Hall and magnetoelectric effects |
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2.3.6 Floquet physics in spin-orbit coupled systems2.4 Rashba devices; 2.4.1 Aharonov-Casher interferometer; 2.4.2 Datta-Das spin field-effect transistor; 2.4.3 Spin-orbit torques devices; 2.4.4 Spin-orbit Qubits; 2.5 Outlook and conclusion; References; 3 Two-dimensional ferrovalley materials; 3.1 Valleytronics in 2D hexagonal lattices; 3.2 Valley polarization induced by external fields; 3.3 Ferrovalley materials with spontaneous valley polarization; 3.3.1 VSe2-Ferrovalley materials induced by ferromagnetism; 3.3.2 Bilayer VSe2-antiferrovalley materials |
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3.3.3 GeSe-Ferrovalley materials induced by ferroelectricity3.4 Summary and outlook; References; 4 Ferromagnetism in two-dimensional materials via doping and defect engineering; 4.1 Introduction; 4.2 Ferromagnetism in graphene; 4.3 Ferromagnetism in boron nitride; 4.4 Ferromagnetism in phosphorene; 4.5 Ferromagnetism of transition-metal dichalcogenide: MoS2; 4.6 Ferromagnetism in two-dimensional metal oxide: SnO; 4.7 Conclusion and prospective; References; 5 Charge-spin conversion in 2D systems; 5.1 Overview; 5.2 Introduction; 5.3 Spin generation; 5.3.1 Spin-polarized charge current |
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5.3.2 Spin injection into nonmagnetic materials5.3.3 Pure spin current; 5.4 Spin detection; 5.4.1 Spin accumulation voltage; 5.4.2 Inverse spin Hall effect; 5.4.3 Magnetoresistance; 5.5 Outlook; 5.5.1 New materials and heterostructures; 5.5.2 New techniques and characterizations; 5.5.3 New device architectures and functionalities; References; 6 Magnetic properties of graphene; 6.1 Significance of magnetic graphene; 6.2 Primary theory of magnetism of graphene-Lieb's theorem; 6.3 General methods for inducing localized magnetic moments in graphene; 6.3.1 Vacancy approach; 6.3.2 Edge approach |
| Note |
6.3.2.1 Graphene quantum dots |
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Includes index. |
| Bibliography |
Includes bibliographical references and index. |
| Subject |
Spintronics.
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Materials.
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Électronique de spin.
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Matériaux.
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Materials
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Spintronics
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| Added Author |
Liu, Wenqing.
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Xu, Yongbing.
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| Other Form: |
Print version: Xu, Yongbing. Spintronic 2D Materials : Fundamentals and Applications. San Diego : Elsevier, ©2019 9780081021545 |
| ISBN |
9780081021552 |
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0081021550 |
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9780081021545 (print) |
| Standard No. |
AU@ 000066526732 |
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