| Description |
1 online resource (6 p.) : ill. |
| Series |
NREL/CP ; 520-42539 |
|
Conference paper (National Renewable Energy Laboratory (U.S.)) ; 520-42539.
|
| Type Of Report |
Conference paper; 11-16 May 2008. |
| Note |
Title from title screen (viewed June 11, 2008). |
|
"May 2008." |
|
Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008." |
| Summary |
We recently reported a new record total-area efficiency, 19.9%, for CuInGaSe2 (CIGS)-based thin-film solar cells. Current-voltage analysis indicates that improved performance in the record device is due to reduced recombination. The reduced recombination was achieved by terminating the processing with a Ga-poor (In-rich) layer, which has led to a number of devices exceeding the prior (19.5%) efficiency record. This paper documents the properties of the world-record-efficiency CIGS solar cell by a variety of characterization techniques, with an emphasis on identifying near-surface properties associated with the modified processing. |
| Bibliography |
Includes bibliographical references (p. 5-6). |
| Funding |
DE-AC36-99-GO10337. PVA74301. |
| Subject |
Photovoltaic cells -- Research.
|
|
Solar cells -- Research.
|
|
Thin films.
|
| Added Author |
Repins, I. L. (Ingrid L.)
|
|
National Renewable Energy Laboratory (U.S.)
|
|
IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.)
|
| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-520-42539 |
|
