| Description |
1 online resource (4 p.) : ill. |
| Series |
NREL/CP ; 520-42510 |
|
Conference paper (National Renewable Energy Laboratory (U.S.)) ; 520-42510.
|
| Type Of Report |
Conference paper; 11-16 May 2008. |
| Note |
Title from title screen (viewed June 6, 2008). |
|
"May 2008." |
|
"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008." |
| Summary |
We use the combination of high-resolution electron microscopy and density-functional theory to study the atomic structure and electronic effects of grain boundaries in polycrystalline photovoltaic materials such as Si, CdTe, CuInSe2, and CuGaSe2. We find that grain boundaries containing dislocation cores create deep levels in Si, CdTe, and CuGaSe2. Surprisingly, however, they do not create deep levels in CuInSe2. We further find that the presence of Ga in grain boundaries in CuInSe2 generates deep levels. These results may explain the fact that Si and CdTe solar cells usually require special passivation, whereas CuInSe2 solar cells do not. The passivation of grain boundaries in Si and CdTe is also studied. We find that grain boundaries in CdTe can be passivated very well by Cl, Br, and I. |
| Bibliography |
Includes biblilographical references (p. 4). |
| Note |
"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under contract no. DE-AC36-99GO10337." |
| Funding |
PVA73201. |
| Subject |
Photovoltaic cells -- Research.
|
|
Solar cells -- Research.
|
| Added Author |
Yan, Yixun.
|
|
National Renewable Energy Laboratory (U.S.)
|
|
IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.)
|
| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-520-42510 |
|
