| Description |
1 online resource (5 p.) : ill. |
| Series |
NREL/CP ; 520-42512 |
|
Conference paper (National Renewable Energy Laboratory (U.S.)) ; 520-42512.
|
| Type Of Report |
Conference paper; 11-16 May 2008. |
| Note |
Title from title screen (viewed June 9, 2008). |
|
"May 2008." |
|
"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008." |
| Bibliography |
Includes bibliographical references (p. 5). |
| Summary |
The untreated physical-vapor-deposited CdTe films had small grains, with <111> texture, and a large concentration of deep levels. For CdCl2 treatments at moderate temperature/time, there was partial recrystallization, and a moderate decrease in the concentration of deep levels. For the optimal treatment conditions, there was complete recrystallization and grain growth, and further decrease in stress. Electron backscatter diffraction showed that these films had a mixture of small and large grains, many larger than 30 micronm. The larger grains had <111> orientation, whereas the smaller grains were randomly oriented, which provided insight on the grain-growth mechanism after recrystallization. There was a significant increase in the cathodoluminescence signal, indicating a decrease in the concentration of deep levels. When performed at the same conditions, the CdCl2 vapor treatment is more effective in the recrystallization and grain-growth processes than the solution CdCl2 treatment. All the films had a large concentration of twin boundaries. |
| Note |
"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under contract no. DE-AC36-99GO10337." |
| Funding |
PVA73201. |
| Subject |
Thin films.
|
|
Crystal growth.
|
|
Photovoltaic cells -- Research.
|
|
Solar cells -- Research.
|
| Added Author |
Moutinho, Helio R.
|
|
National Renewable Energy Laboratory (U.S.)
|
|
IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.)
|
| Added Title |
Recrystallization of physical vapor deposition (PVD) cadmium telluride thin films induced by cadmium chloride treatment |
| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-520-42512 |
|
