| Description |
1 online resource (5 p.) : ill. |
| Series |
NREL/CP ; 520-42537 |
|
Conference paper (National Renewable Energy Laboratory (U.S.)) ; 520-42537.
|
| Type Of Report |
Conference paper; 11-16 May 2008. |
| Note |
Title from title screen (viewed June 9, 2008). |
|
"May 2008." |
|
"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008." |
| Bibliography |
Includes bibliographical references (p. 4-5). |
| Summary |
Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desired conductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers into CIGS PV cells produced at the National Renewable Energy Laboratory (NREL). Preliminary results show quantum efficiency values of these cells rival those of a past world-record cell produced at NREL that used 2.0 wt.% Al-doped ZnO films. The highest cell efficiency obtained in this trial was 18.1%. |
| Note |
"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under contract no. DE-AC36-99GO10337." |
| Funding |
06RF6701. |
| Subject |
Photovoltaic cells -- Research.
|
|
Solar cells -- Research.
|
|
Thin films.
|
| Added Author |
Duenow, Joel N.
|
|
Colorado School of Mines.
|
|
National Renewable Energy Laboratory (U.S.)
|
| Gpo Item No. |
0430-P-04 (online) |
| Sudoc No. |
E 9.17:NREL/CP-520-42537 |
|
