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Author Wei, Su-Huai.

Title Design of shallow p-type dopants in ZnO [electronic resource] : preprint / S.H. Wei, J. Li, and Y. Yan.

Imprint Golden, Colo. : National Renewable Energy Laboratory, [2008]
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Connect to https://permanent.fdlp.gov/gpo23721/42522.pdf

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Location Call No. OPAC Message Status
 Axe Federal Documents Online  E 9.17:NREL/CP-590-42522    ---  Available
Description 1 online resource (4 p.) : ill.
Series NREL/CP ; 590-42522
Conference paper (National Renewable Energy Laboratory (U.S.)) ; 590-42522.
Type Of Report Conference paper; 11-16 May 2008.
Note Title from title screen (viewed June 9, 2008).
"May 2008."
"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008."
Bibliography Includes bibliographical references (p. 4).
Note "The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337."
Funding PVA72213.
Subject Semiconductor doping.
Doped semiconductors.
Crystals -- Defects.
Added Author Li, Jian.
Yan, Yixun.
National Renewable Energy Laboratory (U.S.)
Gpo Item No. 0430-P-04 (online)
Sudoc No. E 9.17:NREL/CP-590-42522

 
    
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