Description |
1 online resource (6 p.) : ill. (chiefly col.) |
Series |
NREL/CP ; 5200-50706 |
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Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5200-50706.
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System Details |
Full text available via Internet in .pdf format. Adobe Acrobat Reader required. |
Note |
Title from title screen (viewed August 1, 2011). |
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"July 2011." |
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"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011." |
Summary |
Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ~85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodo-luminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging. |
Bibliography |
Includes bibliographical references (p. 5-6). |
Funding |
DE-AC36-08GO28308 |
Subject |
Photoluminescence.
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Photovoltaic cells -- Research.
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Solar cells -- Testing.
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Defects.
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Added Author |
Johnston, Steve.
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National Renewable Energy Laboratory (U.S.)
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IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
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Gpo Item No. |
0430-P-04 (online) |
Sudoc No. |
E 9.17:NREL/CP-5200-50706 |
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