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Title Junction transport in epitaxial film silicon heterojunction solar cells [electronic resource] : preprint / David L. Young ... [et al.].

Imprint [Golden, CO] : National Renewable Energy Laboratory, [2011]

Copies

Location Call No. OPAC Message Status
 Axe Federal Documents Online  E 9.17:NREL/CP-5200-50712    ---  Available
Description 1 online resource (4 p.) : col. ill.
Series NREL/CP ; 5200-50712
Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5200-50712.
System Details Full text available via Internet in .pdf format. Adobe Acrobat Reader required.
Note Title from title screen (viewed on September 12, 2011).
"July 2011."
"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."
Summary We report our progress toward low-temperature hot wire chemical vapor deposition (HWCVD) epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous silicon (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.
Bibliography Includes bibliographical references (p. 4).
Funding DE-AC36-08GO28308
Subject Solar cells -- Research.
Photovoltaic cells -- Research.
Epitaxy.
Added Author Young, David L.
National Renewable Energy Laboratory (U.S.)
IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
Gpo Item No. 0430-P-04 (online)
Sudoc No. E 9.17:NREL/CP-5200-50712

 
    
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