| Description |
vi, 71 pages : digital, PDF file |
| Series |
NREL/SR ; 520-42324 |
|
NREL/SR ; 520-42324.
|
| System Details |
Mode of access via the National Renewable Energy Laboratory web site. |
|
Full text available via Internet in .pdf format. Adobe Acrobat Reader required. |
| Note |
Title from title screen (viewed on Mar. 20, 2008). |
| Summary |
This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5). |
| Note |
"November 2007." |
| Subject |
Solar cells -- Research.
|
|
Photovoltaic cells.
|
| Added Author |
Georgia Institute of Technology.
|
|
National Renewable Energy Laboratory (U.S.)
|
| Gpo Item No. |
0430-P-05 (online) |
| Sudoc No. |
E 9.18:NREL/SR-520-42324 |
|
